5n60 Mosfet

Posted : admin On 12/4/2021

POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies. 5N60 TO-220 mosfet original IC diode triode MOSFET transistor FQPF 5N60C 50N06 5N90 5N65 5N80 5P20 5n60c transistor. US $ 0.3-0.4 / Piece. 2000 Pieces (Min. Wuxi Yarun Semiconductor Technology Co., Ltd. B Baosity 5pcs N Channel Power MOSFET 5n60 Low Load Grid 4.5a 600v Free delivery and returns on all eligible orders, Shop B Baosity 5pcs N Channel Power MOSFET 5n60 Low Load Grid 4,5a 600v, Fashion flagship store Great selection at great prices Browse From huge selection Here Online fashion store products are 100% genuine products.



ROUM
5N60 Datasheet Preview

5A 600V N-channel Enhancement Mode Power MOSFET

No Preview Available !

5A 600V N-channel Enhancement Mode Power MOSFET
These N-channel Enhanced VDMOSFETs, is obtained by
the self-aligned planar technology which reduce the
conduction loss, improve switching performance and
enhance the avalanche energy. Which accords with the
VDSS = 600V
ID = 5A
● Fast Switching
● Low Gate Charge(Typical:19.5nC)
● Low Reverse Transfer Capacitances(Typical:7.5pF)
● 100% ΔVDS Test
● used in various power switching circuit for system
● Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Symbol
5N60/I5N60/E5N60
Drian-Source Voltage
Gate-Drain Voltage
Drain Current(continuous)
T=100℃)
3.6
Single Pulse Avalanche Energy(Note 5)
Avalanche Current(Note 1)
IDM
EAR
dv/dt
270
2.5
Total Dissipation
TC=25
Ptot
85
storage Temperature
Tstg -55150
TL
F5N60
34
V
A
A
mJ
V/ns
W
4.2 Thermal Characteristics
Thermal Resistance Junction to Case-sink
Symbol
RthJA
5N60/I5N60/E5N60
1.47
F5N60
62.5
/W
ROUM Semiconductor Technology CO.,LTD.
Page 1 of 12

5n60 Mosfet Equivalent



ROUM
5N60 Datasheet Preview

5A 600V N-channel Enhancement Mode Power MOSFET

No Preview Available !

4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Symbol
Value
Off Characteristics
Breakdown Voltage
ID=250μA,VGS=0V
--
Leakage Current
VDS=600V,VGS=0V,TC=25
--
-- 1
Gate-to-Source
IGSSF
-- -- 100
Reverse Leakage
VGS=-30V
On Characteristics(Note 3)
VGS(th)
2 -- 4
ance
VGS=10V,ID=2.5A
Dynamic Characteristics(Note 4)
uctance
VDS=30V,ID=5A
Input Capacitance
-- 720 --
Coss
acitance
Switching Characteristics(note4)
td(on)
tr
td(off)
tf
--
--
ID=5A,
VGS=10V,
-- 9.5 --
-- 34 --
Total Gate Charge
-- 19.5 --
Gate-to-Drain(“Miller”)C
Qgs
ID=5A,VDD=300V,VGS=10V
4 --
Drain-Source Diode Characteristics
(Note 3)
VGS=0V,IS=5A
Diode Forward Current
IS
5
Reverse Recovery
trr
TJ=25,IF=5A,
-- 203 --
Units
μA
nA
V
S
nS
V
nS
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=7.4A,VDD=50V,VGATE=600V,Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
Page 2 of 12



1 Page
5n60Transistor mosfet 5n60

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
4.5 Amps, 600 Volts
Power MOSFET
The UTC 5N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
5n60 Mosfet
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
TO-220
TO-220F
* RDS(ON) = 2.5@VGS = 10 V
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
* Avalanche energy Specified
*Pb-free plating product number: 5N60L
2.Drain
3.Source
Order Number
Lead Free Plating
5N60L-TA3-T
5N60L-TF3-T
TO-220
Pin Assignment
GDS
Packing

5n60 Mosfet Vs

Tube
5n60
(1)Packing Type
(3)Lead Plating
(2) TA3: TO-220, TF3: TO-220F
Mosfet
www.unisonic.com.tw

5n60 Mosfet Switch

1 of 6

5n60 Mosfet Board