N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES. Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFET † New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile † 100% Rg Tested APPLICATIONS † DC/DC Conversion PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 30 0.0195 at VGS = 10 V 10 0.030 at. 30VN-Channel MOSFET General Description Product Summary VDS ID (at V GS =10V) 40A R DS(ON) (at V GS =10V) MOSFET technology with a low resistance package to provide extremely low R DS(ON. 172-7426 Kobiconn DC Power Cords 2.5MM 4 COND 6' BK datasheet, inventory & pricing. The MOSFET is the most widely used type of transistor and the most critical device component in integrated circuit (IC) chips. The monolithic integrated circuit chip was enabled by the surface passivation process, which electrically stabilized silicon.
Type Designator: ZXMC3A17DN8
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2.1 W
Maximum Drain-Source Voltage Vds : 30 V
Maximum Gate-Source Voltage Vgs : 20 V
Maximum Drain Current Id : 5.4 A
Total Gate Charge (Qg): 12.2 nC
Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm
ZXMC3A17DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMC3A17DN8 Datasheet (PDF)
0.1. zxmc3a17dn8.pdf Size:280K _diodes
ZXMC3A17DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4AP-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltag
7.1. zxmc3a18dn8.pdf Size:686K _diodes
7426 Mosfet Motor
ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef
7.2. zxmc3a16dn8.pdf Size:312K _diodes
ZXMC3A16DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,
Datasheet: DMC3018LSD, DMC3021LK4, DMC3021LSD, DMC3028LSD, DMC3032LSD, DMC3036LSD, DMG6602SVT, ZXMC3A16DN8, IRF730, ZXMC3A18DN8, ZXMC3AMC, ZXMC3F31DN8, ZXMD63C03X, BSS8402DW, DMC4028SSD, DMC4040SSD, DMC4050SSD.
MOSFET: CEZ3R04 CEZ3P08 CES2322 CEB93A3 CEF9060N CEB6086 CEN2321A CEN2307A CEM9288 CEM6056L CEM4052 CEM2192 CEU25N02 CED25N02 CEU20N02 CED20N02
AON7426 데이터시트 및 PDF 파일을 제공합니다.
이 전자부품의 정확한 파트넘버 및 부품번호는 AON7426 입니다.
반도체 부품 중의 하나이며, 30V N-Channel MOSFET 기능을 가지고 있습니다.
해당 부품의 제조사는 Alpha & Omega Semiconductors 입니다.
사진 및 이미지 :
7426 Mosfet Drive
AON7426 데이터시트 다운로드
PDF 내의 텍스트 파일 일부 내용 :
AON7426 30V N-Channel MOSFET General Description The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 40A < 5.5mΩ < 8.3mΩ ESD protected 100% Rg Tested Top View DFN 3×3 EP Bottom View D Top View 1 2 3 4 8 7 6 5 G Pin 1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Power Dissipation B Power Dissipation A C Maximum 30 ±20 40 31 130 18.6 14.9 35 14 3.1 2 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM PD PDSM TJ, TSTG A W W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum J […]