### globaltactics.co

In general, MOSFET from the same manufacturer, same series, and with the same VDSS will have the same design for each unit cell. The difference in rated current is a result of differences in bare die size, so the larger the bare die, the more cells can be added to lower the ON resistance. For an n-channel MOSFET, the device operates in the first quadrant when a positive voltage is applied to the drain, as shown in figure 2. As the gate voltage (VG) increases above the threshold voltage (VTH), the MOSFET channel begins to conduct current. The amount of current it conducts depends on the on-resistance of the MOSFET, as defined. Part Number: UCC27710 Hello, please pardon my naive question. I am confused with how to calculate Rgs for driving the high and low side MOSFET gates. Figure 44 shows a Resistor between the gate and source, but there is no information regarding choosing this component. Power MOSFET Basics. Crss =Cgd Intrinsic Resistance, Rg: The intrinsic resistance shown in Figure 6 is a part of the total gate resistance with.

Type Designator: 9N90C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage Vds : 900 V

Maximum Gate-Source Voltage Vgs : 30 V

Maximum Gate-Threshold Voltage Vgs(th) : 5 V

Maximum Drain Current Id : 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 175 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-247AB

9N90C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

## 9N90C Datasheet (PDF)

0.1. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

0.2. fqa9n90c.pdf Size:799K _fairchild_semi

July 2007 QFETFQA9N90C 900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to Fa

0.3. fqa9n90c f109.pdf Size:804K _fairchild_semi

July 2007 QFETFQA9N90C_F109900V N-Channel MOSFETFeatures Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

0.4. fqpf9n90ct.pdf Size:840K _fairchild_semi

TMQFETFQP9N90C/FQPF9N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC)planar stripe, DMOS technology. Low Crss ( typical 14pF)This advanced technology has been especially tailored to

0.5. tsm9n90ci tsm9n90cz.pdf Size:419K _taiwansemi

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

0.6. tsm9n90cn.pdf Size:311K _taiwansemi

TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

0.7. ap09n90cw.pdf Size:217K _ape

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible

0.8. ap09n90cw-hf.pdf Size:60K _ape

AP09N90CW-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6AG RoHS Compliant & Halogen-FreeSDescriptionAP09N90C provides minimize on-state resistance , superior switchingperformance and high efficiency switching power su

0.9. 9n90b 9n90c.pdf Size:381K _nell

RoHS 9N90 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET9A, 900VoltsDESCRIPTIOND The Nell 9N90 is a three-terminal silicon devicewith current conduction capability of 9A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as GGD

0.10. ssm09n90cgw.pdf Size:624K _silicon_standard

SSM09N90CGWN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM09N90CGW acheives fast switching performanceBVDSS 900Vwith low gate charge without a complex drive circuit. It isRDS(ON) 1.4suitable for high voltage applications such as AC/DCconverters and offline power supplies.I 7.6AD The SSM09N90CGW is in a TO-247 (TO-3P) package,Pb-free; RoHS-com

0.11. fqpf9n90c.pdf Size:232K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQPF9N90CDESCRIPTIONRDS(on) = 1.4 @VGS = 10 V, ID = 4 AFast Switching Speed100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDS

Datasheet: 8N80A, 8N80AF, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B, IRF8010, AMA2N7002, AMA410N, AMA420N, AMA421P, AMA423P, AMA430N, AMA433P, AMA440N.

### Last Update

MOSFET: CEZ3R04 CEZ3P08 CES2322 CEB93A3 CEF9060N CEB6086 CEN2321A CEN2307A CEM9288 CEM6056L CEM4052 CEM2192 CEU25N02 CED25N02 CEU20N02 CED20N02

In continuation of the previous discussion of Si transistor types, features and basic characteristics, we here provide an additional explanation of the characteristics of Si MOSFETs that are at present widely used as power switches.

MOSFET Parasitic Capacitance

Due to their structure, MOSFETs have a parasitic capacitance, as indicated in the diagram below. The diagram below is for an example of an N-channel MOSFET, but the situation is much the same for P-channel devices. In the power MOSFETs we are here considering that handle large amounts of power, the parasitic capacitance must be regarded as a parameter that limits the usage frequency and switching speed.

The drain and source of a MOSFET are insulated from the gate by the gate oxide film. A PN junction is formed between the drain and source with substrate intervening, and a parasitic ('body') diode is present.

The gate-source capacitance Cgs and gate-drain capacitance Cgd in the diagram below are determined by the capacitance of the gate oxide film. The drain-source capacitance Cds is the junction capacitance of the parasitic diode.

The three parameters Ciss, Coss, Crss appearing on MOSFET data sheets in general relate to these parasitic capacitances. On data sheets which provide separate descriptions of static characteristics and dynamic characteristics, these are classified as dynamic characteristics. These are important parameters affecting switching performance.

Ciss is the input capacitance, and is the capacitance obtained by totaling the gate-source capacitance Cgs and the gate-drain capacitance Cgd; it is the capacitance of the MOSFET as a whole, as seen from the input. This capacitance must be driven (charged) in order to cause the MOSFET to operate, and so is a parameter of importance when studying the drivability of an input device or input losses. Qg is the amount of charge necessary to drive (charge) Ciss.

Coss is the output capacitance, obtained by adding the drain-source capacitance Cds and the gate-drain capacitance Cgs, and is the total capacitance on the output side. If Coss is large, a current arising due to Coss flows at the output even when the gate is turned off, and time is required for the output to turn off completely.

Crss is the gate-drain capacitance Cgd itself, and is called the feedback capacitance or the reverse transfer capacitance. If Crss is large, the rise in drain current is delayed even after the gate is turned on, and the fall in current is delayed after the gate is turned off. In other words, this parameter greatly affects switching speed. Qgd is the charge amount necessary to drive (charge) Crss.

These capacitances exhibit a dependence on the drain-source voltage VDS. As indicated in the graph, there is a tendency for capacitance values to be reduced as VDS is increased.

Temperature Characteristic of MOSFET Parasitic Capacitances

Ciss, Coss and Crss change hardly at all with temperature. Hence it can be said that switching characteristics are hardly affected at all by temperature changes. Actual measurement examples are shown below.

Here we have explained parasitic capacitances, which are dynamic characteristics of MOSFETs. Next time, we will discuss device switching.

#### Key Points:

・MOSFETs have parasitic capacitances, which are important parameters that have an effect on switching characteristics.

・Parasitic capacitances change hardly at all with temperature, and so temperature changes exert almost no effect on switching characteristics.