Egan Fet

Posted : admin On 1/3/2022

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer. Using GaN FETs can be as simple as using Silicon FETs – an example in 48V. GaN ePower Stage IC-Based Inverter for Battery-Powered Motor Drive Applications Efficient Power Conversion (EPC) Receives Elektra Award 2020 for. An icon used to represent a menu that can be toggled by interacting with this icon. The forward voltage of the internal diode is higher than the diode forward drop in a silicon based FET, hence the dead time or the diode conduction time should be minimized to get maximum efficiency. In short, the body diode in eGaN FET acts like a Schottky diode with slightly higher forward drop. EGaN® FET DATASHEET EPC – EFFICIENT POWER CONVERSION CORPORATION WWW. EPC-CO.COM COPYRIGHT 2013 PAGE 1 EPC2016 Gallium Nitride is grown on. Jun 05, 2013 eGaN® FET Structure. SEM micrograph of an eGaN FET. Top view of a completed eGaN FET. This device is rated at 40 V, 4 mΩ, and 33 Amperes. In this first of a series of articles we introduced the concept that GaN-on-silicon power devices could be a superior replacement for the aging power MOSFET.

GaN Advanced Learning 2 - Design Basics

News: Microelectronics

2 March 2021

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has expanded its AEC Q101-qualified product family with the addition of the EPC2219 65V GaN transistor with integrated reverse gate clamp diode optimized for high-resolution light detection & ranging (LiDAR) systems in the automotive industry and other harsh environments.

eGaN technology has been in mass production for more than a decade, accumulating billions of hours of successful field experience in automotive applications, such as LiDAR and radar for autonomous vehicles (AVs), 48V–12V DC–DC converters for mild hybrid power, ultra-high-fidelity infotainment systems, and high-intensity headlamps for trucks.

GaN Advanced Learning 2 - Design BasicsGaN Application Demo 3: eGaN FETs for LiDAR (Light Distancing and Ranging)

The EPC2219 has completed rigorous automotive AEC Q101 qualification testing including humidity testing with bias (H3TRB), high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. The new GaN device will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.

In addition to LiDAR in demanding automotive applications, the EPC2219 – a 65V, 3.3Ω, eGaN FET with integrated reverse gate clamp diode and tiny 0.81mm2 footprint – is suitable for driving GaN FETs in radar and ultrasonic sensors, satellite reaction wheels, high-frequency DC–DC conversion, wireless power, and class-D audio.

To complete AEC Q101 testing, EPC’s eGaN FETs undergo rigorous environmental and bias-stress testing. EPC notes that its wafer-level chip-scale (WLCS) packaging passes all the testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. eGaN devices passing AEC Q101 testing are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.

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“This new automotive product is the latest addition to a growing family of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety,” says CEO & co-founder Alex Lidow.

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The EPC2219 eGaN FET is priced at $0.54 each for 2.5Ku/reel and is available for immediate delivery from distributor Digi-Key.

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Tags: EPCE-mode GaN FETs

Gallium Nitride (GaN) ICs And Semiconductors – EPC

Visit: www.epc-co.com