Gallium Nitride Fet

Posted : admin On 1/3/2022

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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternat. Gallium Nitride (GaN) Power FETs Gallium Nitride (GaN) is a hard and stable substance that is revolutionizing semiconductors for military communications, radar, and electronic warfare. SSDI specializes in offering fully screened GaN products in hermetically sealed packaging. Contact the factory to inquire about modifications or other requirements. The market for gallium nitride (GaN) semiconductors is largely consolidated, with the top four companies taking 65% of the overall market in 2015 says Transparency Market Research (TMR). The dominant company among these top four is Efficient Power Conversion (EPC) with a 19.2% share, with NXP Semiconductors, GaN Systems and Cree making up the rest. The New English-Russian Dictionary of Radio-electronics gallium-nitride FET. 8 Copper-Indium-Gallium-Selenide.

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Orderable parts

Type numberOrderable part numberOrdering code (12NC)PackageBuy from distributors
GAN041-650WSBGAN041-650WSBQ934661752127SOT429Order product

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

Buy from Nexperia

Buy from distributors

* Stock values are subject to change
** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia

Features and benefits

  • Ultra-low reverse recovery charge
  • Simple gate drive (0 V to +10 V or 12 V)
  • Robust gate oxide (±20 V capability)
  • High gate threshold voltage (+4 V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode
  • Transient over-voltage capability
Nitride

Applications

  • Hard and soft switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

Parametrics

Type number
GAN041-650WSBSOT429TO-247ProductionN16504117547.25221871503.9N15001472020-05-14

Package

StatusPackagePackage informationReflow-/Wave soldering
GAN041-650WSBGAN041-650WSBQ
(9346 617 52127)
ActiveGAN041650WSB
TO-247
(SOT429)
SOT429Horizontal, Rail Pack

Quality, reliability & chemical content

Quality and reliability disclaimer

Documentation (18)

File nameTitleTypeDate
GAN041-650WSB650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 packageData sheet2021-01-12
AN90005Understanding Power GaN FET data sheet parametersApplication note2020-06-08
AN90004Probing considerations for fast switching applicationsApplication note2019-11-15
AN90006Circuit design and PCB layout recommendations for GaN FET half bridgesApplication note2019-11-15
AN90021Power GaN technology: the need for efficient powerconversionApplication note2020-08-14
nexperia_brochure_ganNexperia GaN FETs brochureBrochure2021-03-29
nexperia_document_brochure_GaN_CHN高功率氮化镓场效应 晶体管Brochure2021-03-29
TO-247_SOT429_mkplastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm bodyMarcom graphics2019-02-19
sot429_3dplastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247Outline 3d2020-04-06
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
TN90004An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalabilityTechnical note2020-07-21
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25
nexperia_whitepaper_gan_robustness_aecq101White paper: GaN FET technology and the robustness needed for AEC-Q101 qualificationWhite paper2020-06-08
nexperia_whitepaper_gan_robustness_aecq101_CNWhitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率,以及AEC-Q101 认证所需的耐用性)White paper2020-07-15
nexperia_whitepaper_gan_need_for_efficient_conversionWhite paper: Power GaN technology: the need for efficient power conversionWhite paper2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN白皮书: 功率GaN技术: 高效功率转换的需求White paper2020-08-17

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.

Models

File nameTitleTypeDate
GAN041_650WSBGAN041-650WSB SPICE modelSPICE model2021-03-24
GaN041-650WSB_cauerGaN041-650WSB Cauer thermal modelThermal model2021-03-25
GaN041-650WSBGaN041-650WSB Foster thermal modelThermal model2021-03-25
GaN041-650WSB_RC_Thermal_ModelGaN041-650WSB RC thermal modelThermal model2021-03-25

Ordering, pricing & availability

Buy online
GAN041-650WSBGAN041-650WSBQ934661752127Horizontal, Rail PackOrder product

Sample

As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.

Sample orders normally take 2-4 days for delivery.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.

Electronics News

Toshiba Corporation has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz. The main application of the transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba plans to start sample shipment of the power FET by the end of 2007 and to go into mass production by the end of March 2008. Advances in Ku-band microwave amplifiers focus on replacing the electron tubes conventionally used at this bandwidth with semiconductors, particularly GaN devices, which offer advantageous high power characteristics at higher microwave frequencies.
The power FET has a high electron mobility transistor (HEMT) structure that Toshiba has optimized for the Ku-band. The company replaced source wire bonding with via hole technology to reduce parasitic inductance, and also improved overall design of the matching circuit for practical application at Ku-band frequencies.

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