H11f3m

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Description: MOSFET Output Optocouplers ANALOG FET Compare With Current Part. Specifications products found. To show similar products, select at least one checkbox. Product Attribute Attribute Value Search Similar; Manufacturer: ON Semiconductor. Colors of most Ln 3+ compounds in water solution La f 0, f 14 f 1, f 13 f 2, f 12 f 3, f 11 f 4, f 10 f 5, f 9 f 6, f 8 f 7 Ce Pr Nd Pm Sm Eu Gd Tb Dy.

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H11f3m
H11f3m

H11f3m

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Details, datasheet, quote on part number: H11F3M
PartH11F3M
Category
DescriptionPhoto FET Optocouplers
CompanyFairchild Semiconductor
DatasheetDownload H11F3M Datasheet
Quote
Features, Applications

Features

As a remote variable resistor: 300M 99.9% linearity 15pF shunt capacitance 100G I/O isolation resistance As an analog switch: Extremely low offset voltage 60 Vpk-pk signal capability No charge injection or latch-up ton, toff 15µS UL recognized (File #E90700)

The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Applications

As a remote variable resistor: Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch:

Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion

Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

TOTAL DEVICE TSTG TOPR TSOL EMITTER IF VR IF(pk) PD DETECTOR PD BV4-6 Detector Power Dissipation @ 25°C Derate linearly from 25°C Breakdown Voltage (either polarity) H11F3M I4-6 Continuous Detector Current (either polarity) All mW mW/°C V mA Continuous Forward Current Reverse Voltage Forward Current ­ Peak (10 µs pulse, 1% duty cycle) LED Power Dissipation 25°C Ambient Derate Linearly from 25°C All A mW mW/°C Storage Temperature Operating Temperature Lead Solder Temperature All +100 260 for 10 sec °C

EMITTER BV4-6 I4-6 Input Forward Voltage Reverse Leakage Current Capacitance Breakdown Voltage Either Polarity Off-State Dark Current = 1.0 MHz R4-6 C4-6 Off-State Resistance Capacitance = 1MHz All H11F2M H11F3M All pF V

Resistance, non-linearity and assymetry AC CHARACTERISTICS ton toff Turn-On Time Turn-Off Time
Isolation Voltage Isolation Resistance Isolation Capacitance

H11f3m

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