Vertical Mosfet

Posted : admin On 1/2/2022
Vertical(redirected from vertical MOSFET)Vertical Mosfet

In 1969, Hitachi introduced the first vertical power MOSFET, which would later be known as the VMOS (V-groove MOSFET). The same year, the DMOS (double-diffused MOSFET) with self-aligned gate was first reported by Y. Hayashi and Toshihiro Sekigawa of the Electrotechnical Laboratory (ETL). The 2SK532 is a silicon N - vertical MOSFET transistor, Uds=60V, Ids=12A.

power MOSFET

A type of metal oxide semiconductor field effect transistor (MOSFET) used to switch large amounts of current. Power MOSFETs use a vertical structure with source and drain terminals at opposite sides of the chip. The vertical orientation eliminates crowding at the gate and offers larger channel widths. In addition, thousands of these transistor 'cells' are combined into one in order to handle the high currents and voltage required of such devices.
Vertical mosfet structureFollowing are the common types of power MOSFETs. The last example is a combination MOSFET and bipolar junction transistor (BJT), known as an 'insulated gate bipolar transistor' (see IGBT). See MOSFET.
Power MOSFETs
All power MOSFETs use a vertical structure in which the source and drain are at opposite sides of the chip. The last example is a combination of MOSFET and bipolar technologies, which is typically used in higher power applications.
Copyright © 1981-2019 by The Computer Language Company Inc. All Rights reserved. THIS DEFINITION IS FOR PERSONAL USE ONLY. All other reproduction is strictly prohibited without permission from the publisher.

Want to thank TFD for its existence? Tell a friend about us, add a link to this page, or visit the webmaster's page for free fun content. Vertical Mosfet
Link to this page:
Microsemi Electronic Components Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

The VRF2933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
VRF2933
50V, 300W, 150MHz
SS
FEATURES
• 300W with 22dB Typ. Gain @ 30MHz, 50V
• Common Source Configuration
• 3:1 Load VSWR Capability at Specified Operating Conditions
• Refractory Gold Metallization
• RoHS Compliant
Symbol
VDSS
ID Continuous Drain Current @ TC = 25°C
PD Total Device dissipation @ TC = 25°C
TJ Operating Junction Temperature Max
VRF2933(MP)
170 V
±40 V
-65 to 150
°C
Symbol
VDS(ON)
IGSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs Forward Transconductance (VDS = 10V, ID = 20A)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
170 180
V
2.0 μA
2.9 3.6 4.4
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Vertical Power Mosfet

Microsemi Electronic Components Datasheet

RF POWER VERTICAL MOSFET

No Preview Available !

Symbol
CISS Input Capacitance
Crss Reverse Transfer Capacitance
Symbol
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
ηD f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
Test Conditions
VDS = 50V
3:1 VSWR - All Phase Angles
Min Typ Max Unit
400 pF
Min Typ Max Unit
dB
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
55
50
40
30
25
15
5 4V
0
10 15
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
1.0E−8
Ciss
1.0E−10
1.0E−11 0
20 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
250µs PULSE
CYCLE
TJ= -55°C
15
5
0
46
VGS, GATE-TO-SOURCE VOLTAGE (V)
100
10
PD Max
TC = 75°C
1
100 800
FIGURE 4, Forward Safe Operating Area
Vertical Mosfet

Vertical Mosfet Dimensions